RTU Kota BTech 3rd Semester Electronic Devices Question Paper 2026 (ECE and BI)

RTU Electronic Devices 2026 Paper Review

Preparing for the Rajasthan Technical University BTech Electronic Devices exam requires a firm grasp of solid-state physics, carrier transport mechanisms, and transistor operations. For Electronics and Communication or Biomedical Engineering students fabricating integrated circuits, optimizing sensor designs, or micro-machining bio-compatible probes, understanding carrier dynamics under varying electric fields is foundational. You cannot design high-speed processors or low-noise medical amplifiers without mastering energy band diagrams, diffusion currents, and junction capacitances.

The 2026 paper tests your capability to solve carrier concentration equations, derive diode currents, analyze bipolar junction transistor transport factors, and evaluate metal-oxide-semiconductor field-effect transistor thresholds. Publishing this specific 3rd semester paper review directly to your exam support website provides your users exactly what they need to understand how examiners construct device physics problems and distribute marks across semiconductor structures. This targeted preparation strategy helps approach the exam confidently, Aryan.

Understanding the Exam Pattern

The RTU theory examination is a three hour paper worth 70 marks. The paper features three distinct sections designed to evaluate both theoretical device physics and quantitative design problems.

Part A: This section contains ten compulsory questions worth two marks each. You must define terms like drift velocity, state the Einstein relation, define the early effect in BJTs, or explain the concept of channel length modulation under 30 words.

Part B: You will find seven questions here. You must answer five of them. Each question is worth four marks. Your answers require explaining Fermi-Dirac distribution functions, calculating the built-in potential of an abrupt PN junction, or comparing the sub-threshold characteristics of MOSFETs with examples.

Part C: This section offers five major questions. You need to answer three. Each question carries ten marks. These require you to derive the continuity equation for minority carriers, calculate the depletion width and maximum electric field under reverse bias, or establish the ideal current-voltage relationships for a MOSFET using the gradual channel approximation.

Core Topics Evaluated in the Paper

The 2026 question paper covers several critical modules that establish the physical laws for solid-state electronics. Focus your study time on these specific areas to maximize your score.

Semiconductor Physics and Carrier Transport

This module evaluates your mathematical grasp of charge movement. You must master the calculations for intrinsic and extrinsic carrier concentrations using the law of mass action. Practice deriving transport equations involving drift, diffusion, and recombination-generation processes.

PN Junction Diodes and Space Charge Behavior

Junction interfaces form the core of most semiconductor units. You must analyze the depletion region under zero, forward, and reverse bias conditions. The paper features quantitative problems requiring you to compute the junction capacitance ($C_j$), built-in potential ($V_{bi}$), and maximum electric field ($E_{max}$) using Poisson's equation. For an abrupt junction, you must confidently apply the depletion width equation:

$$W = \sqrt{\frac{2\epsilon_s}{q} \left(\frac{1}{N_A} + \frac{1}{N_D}\right) (V_{bi} - V)}$$

Bipolar Junction Transistors (BJT)

This module focuses on minority carrier injection and base transport. Study the structural operational profiles across forward-active, saturation, and cutoff modes. Practice sketching the precise minority carrier profile curves across the emitter, base, and collector regions. You must solve equations for base transit time, emitter efficiency, and base transport factors.

Field Effect Transistors (MOSFET)

Review the multi-layered physics of the Metal-Oxide-Semiconductor (MOS) capacitor system. You must master the conditions for accumulation, depletion, and inversion. Practice drawing the energy band diagrams across these states. The paper heavily targets short-channel effects, threshold voltage shifts, and drain-source saturation characteristics.

Answer Writing Strategy for High Marks

RTU evaluators look for accurate energy band diagrams, properly labeled carrier distribution plots, and step-by-step mathematical integrations. Use a blue pen for text explanations, equations, and derivations. Use a black pen and ruler for drawing band structures, circuit cross-sections, and IV characteristics.

In Part A, answer directly. If a question asks for the definition of the hall effect, state clearly that it is the generation of a transverse voltage across a current-carrying conductor placed within a perpendicular magnetic field.

In Part B, utilize explicit graphics. When explaining the early effect, sketch the output characteristics of a common-emitter BJT, showing how extrapolating the linear curves leads to a single intersection point on the negative voltage axis.

In Part C, device modeling precision dictates your score. When asked to evaluate an abrupt PN junction, sketch the charge density profile, the electric field distribution, and the electrostatic potential plots vertically aligned with each other to show structural continuity.

Time Management During the Exam

Allocate exactly 20 minutes to Part A. Spend 40 minutes addressing the five short-answer questions in Part B. Reserve the remaining 120 minutes for the three long-answer questions in Part C. Setting up multi-variable boundary conditions, calculating exponent values, and drawing multi-stage energy band shifts requires steady focus and significant writing time. This distribution guarantees you 40 minutes per major question, giving you time to double-check your arithmetic conversions. Use the final 10 minutes to verify your question numbering, check that your electron and hole flow arrows match your bias conditions, and verify your metric units for carrier concentrations.